FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors.
نویسندگان
چکیده
Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8-0.9 cm(2) V(-1) s(-1) in the photo-irradiated films.
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ورودعنوان ژورنال:
- Chemical communications
دوره 48 90 شماره
صفحات -
تاریخ انتشار 2012